A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2015
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2015.2464251